Intro
During my undergraduate capstone project, we noticed a need for an optical sensor with higher sensitivity within the range of 900-1200 nanometers (nm). My first semester of my graduate studies I fixed our lab’s plasma enhanced sputter deposition system which enabled for the deposition of very thin layers of semiconductor materials! So we developed an optical sensor prototype using modern semiconductor fab techniques. The sensor is comprised of :
- hybrid titanium dioxide layer (TiO2)
- silicon layer
- transparent FTO conducting layer
- hole transport layer of P3HT
- superconductor anode of MXene (Ti3C2)
